|
Journal Papers
1. Jun Hu, Gokul Ramamani, Rahul Radhakrishnan, Jian Wu, Jian. H. Zhao, Xueqing Li, Xiaohui Wang, and Leonid Fursin- "Design of a Robust Non-uniform Guard Ring Edge Termination for Near-theoretical 5.9-kV 4H-SiC JBS Diodes"submitted to IEEE electron device letters on December 6, 2007.
Patents
1. Site convertible thermal structure for circuit breaker.
(Indian Patent Office application No 1514/MUM/2005)
Conferences and Invited talks
1. K. Sheng, R. Radhakrishnan, Y. Zhang and J.H. Zhao- "A Vertical SiC JFET with Monolithically Integrated JBS Diode" submitted to ISPSD 2009
2. "Compound Semiconductor device applications in power electronics" given by invitation of Electrical Engineering association at NIT Calicut on February 19th 2009
3. 4H-SiC Merged PIN Schottky-barrier (MPS) diodes
Masters Technical paper
This is a technical paper presented in July 2007 based on my research in partial fulfillment of the masters program in ECE at Rutgers University.
Project Reports
Special Problem- PCB design, fabrication and circuit implementation
Undergraduate Senior project
synopsis
Junior year project
Seminar-Relativistic Transistor
News Appearances
Energy Seminar organised at NIT Calicut as IEEE Student branch Chair
Letter to the editor of "The Hindu"
|